| Record no |
201102219906 |
| Activity status |
Dead or Administration by others |
| Working Title |
PROCESS FOR THE PREPARATION OF UNIFORM ULTRA THIN FILMS OF METAL OXIDE, METAL CHALCO-GENIDES AND METAL HALIDES |
| Working Inventors |
SATHAYE S. DATTATRAYA;PATIL K. RAGHU;PARANJAPE D. VINAYAK; |
| Contributing institutions |
NCL |
| Administered by |
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| Ownership |
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| Categories > Subjects |
Polymer sciences and engineering |
| Categories > Portfolio |
Polymers for speciality applications |
| Disclosure number |
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| NCL No |
1993-NCL-0041 |
| CSIR No |
1993-NF-0239
|
| Priority date |
02-27-1995 |
| Country |
US |
| Application number |
08/394595 |
| Provisional filing date |
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| Complete filing date |
02-27-1995 |
| Publication status |
Yes |
| Publication date |
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| Publication no |
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| Granted number |
5549931 |
| Granted date |
08-27-1996 |
| Final title |
PROCESS FOR THE PREPARATION OF UNIFORM ULTRA THIN FILMS OF METAL OXIDE, METAL CHALCO-GENIDES AND METAL HALIDES |
| Final Inventors |
SATHAYE S. DATTATRAYA;PATIL K. RAGHU;PARANJAPE D. VINAYAK; |
| Abstract |
A process for the preparation of uniform and ultrathin films
of metal oxides metal chalcogenides or metal halides which comprises of allowing to react interfacially the two immiscible solutions prepared as mentioned hereinbelow.
a Preparing an aqueous solution containing cationanion or species of corresponding elements leading to the formation of metal oxides chalcogenides or halides of which the film is desired
b Preparing a solution of the appropriate cation or anion or species of the corresponding elements leading to formation metal oxides chalcogenides and halides the film of which is to be prepared in a volatile solvent which also facilitates the spreading of the solution on the aqueous solution prepared in step a
c Spreading the solution prepared in step b on the aquesous solution prepared in step a so as to form a film at the interface of aqueous and solvent solutions evaporating the solvent compressing the film formed at the interface laterally
d Dipping a substrate in the solution and withdrawing it from the solution at a uniform rate to transfer the film on substrate surface
The preparation and the deposition operations being effected at a temperature in the range of 10°50° C. and
e Crystallizing the films formed on the substrate by heating it at high temperature.
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| Case status |
Granted + Allowed to lapse |
| Licensing status |
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| Licensing case no |
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| Client name |
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| Lead inventors |
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| Categories > Industry > Primary |
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| Categories > Industry > other |
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